| 最大源漏极电压VdsDrain-Source Voltage | 25v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -25v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.2~1.5ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | |
| 耗散功率PdPower Dissipation | 250mW/0.25W |
| Description & Applications | •N-channel silicon field-effect transistors DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits. |
| 描述与应用 | •N沟道硅场效应晶体管说明 对称n沟道硅 外延结型场效应 晶体管在一个超小型的塑料 信封。晶体管的目的 低级别通用 放大器厚薄膜 电路。 |