| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 10mA |
| 截止频率fTTranstion Frequency(fT) | 14GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 60mW |
| Description & Applications | NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain deal for low current amplifiers and oscillators |
| 描述与应用 | NPN硅RF晶体管 初步数据 低电压/低电流操作 过渡频率为14 GHz 高插入增 处理低电流放大器和振荡器 |