| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 50MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 300mW/0.3W |
| Description & Applications | High Voltage Transistors PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
| 描述与应用 | 高电压晶体管PNP硅 特点 •这些器件是无铅，无卤/ 无BFR，并符合RoHS标准 |