| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 13V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 42Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 160mW/0.16W |
| Description & Applications | NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Extremly small and flat leadless package,height 0.32 mm, ideal for modules • Provides outstanding performance for wireless applications up to 10 GHz • Ideal for WLAN applications,including routers and access points • Based on Infineon's reliable high volume SiGe: • Outstanding noise figure NFmin Outstanding noise figure NFmin • Accurate SPICE GP model enables effective design in process • High maximum stable and available gain • Pb-free (RoHS compliant) package |
| 描述与应用 | NPN硅锗射频晶体管 •高增益超低噪声RF晶体管 的极端小而扁平无引线封装，高度为0.32毫米，非常适合模块 •为无线应用提供出色的性能高达10 GHz的 •非常适合WLAN应用，包括路由器和接入点 基于英飞凌的可靠的高容量锗： •卓越的噪音系数NFmin 卓越的噪音系数NFmin •精确的SPICE GP模型能够有效的设计过程中 •最高稳定和可用增益 •无铅封装（符合RoHS） |