| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 45V |
| 集电极连续输出电流ICCollector Current(IC) | 800mA/0.8A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 110~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 700mV/0.7V |
| 耗散功率PcPower Dissipation | 310mW/0.31W |
| Description & Applications | NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808 |
| 描述与应用 | NPN外延硅晶体管 特点 •开关和放大器应用 •适用于AF驱动阶段和低功率输出级 •补充BC807/ BC808 |