| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -0.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 980mΩ@ VGS = -1.8V, ID = -250mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5~-1.1V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance:Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.5 V) Ron = 980mΩ (max) (@VGS = -1.8 V) |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型（U-MOSIII） 高速开关应用 •最适用于高密度安装在小包装 •低导通电阻:Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.5 V) Ron = 980mΩ (max) (@VGS = -1.8 V) |