| 最大源漏极电压Vds Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
20V |
| 最大漏极电流Id Drain Current |
115mA/0.115A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
5Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
1.2-2.5V |
| 耗散功率Pd Power Dissipation |
200mW/0.2W |
| Description & Applications |
Advanced Small Signal MOSFET Features N-Channel Small Signal MOSFET Lower RDS(on) Improved Inductive Ruggedness Fast Switching Times Lower Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability |
| 描述与应用 |
先进的小信号MOSFET 特性 N-通道小信号MOSFET 更低的RDS（on 改进电感耐用性 快速开关时间 较低的输入电容 扩展安全工作区 改进高温可靠性 |