| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 20mA |
| 截止频率fTTranstion Frequency(fT) | 8Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 160mW/0.16W |
| Description & Applications | NPN Silicon Planar RF Transistor Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. |
| 描述与应用 | NPN硅平面RF晶体管 特点 •低噪声系数 •高功率增益 •铅（Pb）免费组件 •组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 对于低噪声和高增益宽带放大器 集电极电流从0.5 mA到12 mA。 |