最大源漏极电压Vds Drain-Source Voltage |
20V |
最大栅源极电压Vgs(±) Gate-Source Voltage |
8v |
最大漏极电流Id Drain Current |
3.6A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.035Ω/Ohm @4A,4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage |
-0.4--1.0V |
耗散功率Pd Power Dissipation |
810mW/0.81W |
Description & Applications |
• Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • ESD Protected Up To 3KV • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability |
描述与应用 |
•低导通电阻 •低输入电容 •开关速度快 •低输入/输出漏 •铅通过设计/符合RoHS标准(注1) •ESD保护可达3KV •“绿色”设备(注2) •符合AEC-Q101标准的高可靠性 |