| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流ICCollector Current(IC) |
100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) |
150MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
210~460 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
300mV/0.3V |
| 耗散功率PcPower Dissipation |
200mW/0.2W |
| Description & Applications |
Silicon NPN epitaxial planar type For general amplification Complementary to DSA2001 Low collector-emitter saturation voltage VCE(sat) High forward current transfer ratio hFE with excellent linearity Eco-friendly Halogen-free package |
| 描述与应用 |
NPN硅外延平面型 对于一般的放大 DSA2001的补充 低集电极 - 发射极饱和电压VCE（星期六） 高正向电流传输比HFE具有优异的线性度 环保型无卤素封装 |