| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -100mA/-0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 12Ω@ VGS = -4V, ID = -10mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.1~-1.7V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ●High Speed Switching Applications ●Analog Switch Applications ● Small package ● Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型 ●高速开关应用 ●模拟开关应用 ●小型封装 ●低导通电阻RON =12Ω（最大）（@ VGS=-4 V） RON=32Ω（最大）（@ VGS=-2.5 V） |