| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) |
100mA/-100mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
4.7KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
|
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
|
| Q2基极输入电阻R1 Input Resistance(R1) |
4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
|
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
|
| 直流电流增益hFE DC Current Gain(hFE) |
120 |
| 截止频率fT Transtion Frequency(fT) |
250MHz/200MHz |
| 耗散功率Pc Power Dissipation |
100mW/0.1W |
| Description & Applications |
Features • TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
| 描述与应用 |
特点 •东芝硅PNP晶体管NPN外延型（PCT工艺）（偏置电阻晶体管） •两个设备都纳入一个极端超迷你（6针）封装。 •将偏置电阻晶体管，减少了部件数量。减少部件数量，能够制造更加紧凑的设备和降低装配成本。 应用 •开关，逆变电路，接口电路和驱动器电路应用。 |