| 逻辑类型Logic Type | 与非门 NAND Gate |
| 电路数Number of Circuits | 1 |
| 输入数Number of Inputs | 2 |
| 电源电压VccVoltage - Supply | 0.9V~3.6V |
| 静态电流IqCurrent - Quiescent (Max) | 1µA |
| 输出高，低电平电流Current - Output High, Low | -8mA,8mA |
| 低逻辑电平Logic Level - Low | 0.7V~0.8V |
| 高逻辑电平Logic Level - High | 0.9V~2V |
| 传播延迟时间@Vcc，CLMax Propagation Delay @ V, Max CL | 2.5ns @ 3.3V，50pF |
| Description & Applications | Dual 2-Input NAND Gate ;High output current : ±8 mA (min) at VCC = 3 V • Super high speed operation : tpd = 2.5 ns (typ.) at VCC = 3.3 V,15pF • Operating voltage range : VCC = 0.9 to 3.6 V • 5.5-V tolerant inputs • 3.6-V power down protection outputs |
| 描述与应用 | 双2输入与非门;“高输出电流：±8 mA（分钟）在VCC=3 V •超高速运转：TPD =2.5 ns（典型值） 在VCC =3.3 V，15PF •工作电压范围：VCC= 0.9到3.6 V •5.5-V宽容输入 •3.6-V断电保护输出“ |