| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
6V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
2.5V |
| 集电极连续输出电流ICCollector Current(IC) |
30mA |
| 截止频率fTTranstion Frequency(fT) |
11GHZ |
| 直流电流增益hFEDC Current Gain(hFE) |
90~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
|
| 耗散功率PcPower Dissipation |
85MW |
| Description & Applications |
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type . * VHF~UHF Band Low-Noise Amplifier Applications. * VHF~UHF Band Buffer Applications. * Superior performance in buffer applications. * Superior noise characteristics:NF = 1.7dB, |S21e|2 = 7dB (f = 2 GHz). |
| 描述与应用 |
东芝晶体管NPN硅外延平面型。 * VHF??UHF频段低噪声放大器应用。 * VHF??UHF频段缓冲应用。 *缓冲应用中的卓越性能。 *卓越的噪声特性：NF=1.7分贝，S21E|2=7分贝（F =2GHZ）。 |