| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流IC Collector Current(IC) | -500mA/0.5A |
| 基极输入电阻R1 Input Resistance(R1) | 0.47KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.047 |
| 直流电流增益hFE DC Current Gain(hFE) | 140 |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 耗散功率Pc Power Dissipation | 0.1W/100mW |
| Description & Applications | Features • Transistor Silicon PNP Epitaxial Type (PCT Process) • High current driving is possible. • Since bias resisters are built in the transistor, the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of an assembly are possible. • Many kinds of resistance value are lined up in order to support various kinds of circuit design. • Complementary to RN1321A~RN1327A • Low VCE(sat) enable to be low power dissipation on high current driving. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 | 特点 •PNP晶体管的硅外延型（PCT工艺） •高电流驱动是可能的。 •由于内置偏置电阻晶体管的小型化通过削减部件的数量和节省劳力的装置装配是可能的。 •电阻值的多种一字排开，以支持各种种电路设计。 •互补到RN1321A〜RN1327A的 •低VCE（sat）的启用是低功耗，高电流驱动。 应用 •开关，逆变电路，接口电路和驱动器电路应用 |