| 最大源漏极电压Vds Drain-Source Voltage |
50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
12V |
| 最大漏极电流Id Drain Current |
160MA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
VGS = 4V, ID = 100mA RDS=3.1~4Ω
VGS = 2.5V, ID = 80mA RDS=4~5Ω
|
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
0.7~1v |
| 耗散功率Pd Power Dissipation |
0.2w |
| Description & Applications |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• ESD Protected Gate to 2kV
|
| 描述与应用 |
n沟道增强型场效应晶体管
低导通电阻
门阈值电压非常低
低输入电容
ESD保护门2千伏
|