集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
集电极连续输出电流IC
Collector Current(IC) |
-0.1A |
基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
22KΩ/Ohm |
电阻比(R1/R2)
Resistance Ratio |
1 |
直流电流增益hFE
DC Current Gain(hFE) |
|
截止频率fT
Transtion Frequency(fT) |
200MHZ |
耗散功率Pc
Power dissipation |
0.2W |
描述与应用
Description & Applications |
特点 •PNP硅晶体管 •借助内置的偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 |