2SA1676 PNP三极管 -50V -100mA/-0.1A 250MHz 50 -110mV/-0.11V SOT-323/MCP marking/标记 BL 内置偏置电阻器
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -110mV/-0.11V |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP/NPN epitaxial planer silicon transistors Applications · Swicthing circuits, inverter circuits, interface circuits,driver circuits. Features · On-chip bias resistance : R1=47kΩ, R2=47kΩ. |
| 描述与应用 | PNP/ NPN外延刨床 硅晶体管 应用 ·Swicthing电路，逆变器电路，接口电路，驱动器电路。 特点 ·片上偏置电阻：R1=47kΩ上，R2=47kΩ的。 |
| 规格书PDF |
