2SA1729R PNP三极管 -50V -1.5A 300MHz 100~200 -300mV/-0.3V SOT-89/PCP marking/标记 AGR 高速开关
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流ICCollector Current(IC) | -1.5A |
截止频率fTTranstion Frequency(fT) | 300MHz |
直流电流增益hFEDC Current Gain(hFE) | 100~200 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | -300mV/-0.3V |
耗散功率PcPoWer Dissipation | 1.3W |
Description & Applications | PNP epitaxial planar silicon transistor High-speed switching application adoption of FBET process; low collector-to-emitter saturation voltage; fast switching speed; large current capacity |
描述与应用 | PNP外延平面硅晶体管 高速开关应用 采纳的FBET过程; 低集电极 - 发射极饱和电压; 开关速度快; 大电流容量 |
规格书PDF |