2SA1836 PNP三极管 -60V -100mA/-0.1A 180MHz 200~400 -180mV/-0.18V SOT-523/SC-75 marking/标记 M6
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −60V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
截止频率fTTranstion Frequency(fT) | 180MHz |
直流电流增益hFEDC Current Gain(hFE) | 200~400 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | -180mV/-0.18V |
耗散功率PcPoWer Dissipation | 200mW/0.2W |
Description & Applications | PNP SILICON EPITAXIAL TRANSISTOR FEATURES • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = −50 V • Can be automatically mounted |
描述与应用 | PNP硅外延晶体管 特点 •高直流电流增益:HFE2=200 TYP。 •高电压:VCEO=-50 V •可自动安装 |
规格书PDF |