2SB1176(U)-0 PNP三极管 -130V -5A 30MHz 90~260 -500mV/-0.5V TO-252/DPAK marking/标记 B1176 低电压开关
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -130V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −80V |
集电极连续输出电流ICCollector Current(IC) | -5A |
截止频率fTTranstion Frequency(fT) | 30MHz |
直流电流增益hFEDC Current Gain(hFE) | 90~260 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率PcPoWer Dissipation | 1.3W |
Description & Applications | PNP Silicon epitaxial planar transistor For low-voltage switching Complementary to 2SD1746 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. |
描述与应用 | PNP硅外延平面晶体管 对于低电压开关 互补2SD1746 特点 低集电极到发射极饱和电压VCE(SAT) 高速开关 I型包可以直接焊接在印刷电路板等小型电子设备的散热片。 |
规格书PDF |