2SD1006 NPN三极管 100V 700mA/0.7A 90MHz 135~270 300mV/0.3V SOT-89 marking/标记 HL 音频功放应用
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 100V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 100V |
集电极连续输出电流ICCollector Current(IC) | 700mA/0.7A |
截止频率fTTranstion Frequency(fT) | 90MHz |
直流电流增益hFEDC Current Gain(hFE) | 135~270 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率PcPower Dissipation | 2W |
Description & Applications | Silicon NPN epitaxial transistors description 2SD1007 is designed for audio frequency power amplifier application , especially in hybrid integrated circuits Features * high collector to emitter voltage * world standard miniature package |
描述与应用 | NPN硅外延晶体管 描述 2SD1007是专为音频功放中的应用, 特别是在混合集成电路 特点 *高集电极到发射极电压 *世界标准的微型封装 |
规格书PDF |