2SD1624T NPN三极管 60V 3A 150MHz 200~400 190mV/0.19V SOT-89/PCP marking/标记 DG 高电流开关放大
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流ICCollector Current(IC) | 3A |
截止频率fTTranstion Frequency(fT) | 150MHz |
直流电流增益hFEDC Current Gain(hFE) | 200~400 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 190mV/0.19V |
耗散功率PcPower Dissipation | 500mW/0.5W |
Description & Applications | Silicon NPN epitaxial planer type darlington high current switching amplification Features * large current capacity and wide ASO * Low collector to emitter saturation voltage VCE(sat) * fast switch speed * adoption of FBET,MBIT processes |
描述与应用 | NPN硅外延平面型达林顿 高电流开关放大 特点 *大电流容量,广ASO *低集电极到发射极饱和电压VCE(SAT) *开关速度快 *采用的FBET,MBIT进程 |
规格书PDF |