2SD2216-R NPN三极管 60V 100mA/0.1A 150MHz 210 ~ 340 100mV/0.1V SOT-523/SC-75 marking/标记 YR 通用放大
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
截止频率fTTranstion Frequency(fT) | 150MHz |
直流电流增益hFEDC Current Gain(hFE) | 210 ~ 340 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 100mV/0.1V |
耗散功率PcPower Dissipation | 125mW/0.125W |
Description & Applications | Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat) |
描述与应用 | NPN硅外延平面型 对于一般的放大 互补2SB1462 特点 高FOWARD电流传输比HFE。 低集电极到发射极饱和电压VCE(SAT) |
规格书PDF |