2SD999 NPN三极管 Vcbo=30V Vceo=25v Ic= 1A ft=130MHz HFE= 90~180 Vce=210mV/0.21V SOT-89 marking/标记 CM
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 130MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 90~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 210mV/0.21V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | NPN Silicon epitaxial transistor power Mini Mold low collector saturation voltage ：Vce<0.4v excellent DC current gain linearity ：hFE =140 complement to PNP type 2SB798 |
| 描述与应用 | NPN硅外延晶体管电源小型模具 低集电极饱和电压VCE<0.4V 优良的直流电流增益线性度：HFE= 140 补充PNP型2SB798 |
| 规格书PDF |
