2SJ357-T1 P沟道MOS功率场效应管 -30V 3A 0.12ohm Vth:-1.0--2.0V >89 marking/标记 UA1 高速开关
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -20V |
| 最大漏极电流IdDrain Current | -3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.12Ω @-1.5A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--2.0V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | FEATURES • New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages • Can be directly driven by an IC operating at 5 V. • Low on-resistance RDS(ON) = 0.35 Ω MAX. @VGS = –4 V, ID = –1.5A RDS(ON) = 0.20 Ω MAX. @VGS = –10 V, ID = –1.5 A |
| 描述与应用 | •新型的紧凑型封装 包小信号和具有优势 功率晶体管，并弥补这些缺点 •可直接驱动IC工作在5 V。 •低导通电阻 RDS（ON）= 0.35Ω最大。 @ VGS=-4 V，ID=-1.5à RDS（ON）= 0.20Ω最大。 @ VGS=-10V，ID=-1.5à |
| 规格书PDF |
