2SJ461 P沟道MOS场效应管 -50V 100mA/0.1A 0.31ohm SOT-23 marking/标记 H19 高速开关 高输入阻抗
| 最大源漏极电压VdsDrain-Source Voltage | -50V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 7V |
| 最大漏极电流IdDrain Current | -0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.31Ω @-10mA,4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.7--1.3V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | MOS FEILD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING can be driven by a 2.5V power source not necessary to consider driving current because of its high input impedance possible to reduce the number of parts by omitting the bias resistor |
| 描述与应用 | MOS场场效应晶体管 P沟道MOS场效应晶体管用于高速开关 可以由一个2.5V电源 不必考虑驱动电流，因为它的高输入阻抗 能够减少部件的数目通过省去偏置电阻 |
| 规格书PDF |
