2SJ501 P沟道MOS场效应管 -20V 150mA/0.15A 0.6ohm SOT-23 marking/标记 EM 低导通电阻 超高速开关
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | -0.15A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.6Ω @-300mA,-4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5--1.5V |
| 耗散功率PdPower Dissipation | 250mW/0.25W |
| Description & Applications | Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. |
| 描述与应用 | ·低导通电阻。 ·超高速开关。 ·2.5V驱动器 |
| 规格书PDF |
