2SJ576APTL-E P沟道MOS场效应管 -30V 100mA/0.1A 0.28ohm SOT-323 marking/标记 AP 低导通电阻 超高速开关 4V驱动
最大源漏极电压VdsDrain-Source Voltage | -30V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | -0.1A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.28Ω @-50mA,-10V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -1.3--2.3V |
耗散功率PdPower Dissipation | 300mW/0.3W |
Description & Applications | Features •Low on-resistance RDS=2.8 Ω typ. (VGS = -10 V , ID = -50 mA)RDS=5.7 Ω typ. (VGS = -4 V , ID = -50 mA) •4 V gate drive device. •Small package (CMPAK) |
描述与应用 | •低导通电阻 RDS=2.8Ω(典型值)。 (VGS= -10V, ID= -50毫安)RDS=5.7Ω(典型值)(VGS=-4 V,ID=-50毫安) •4 V栅极驱动装置。 •采用小型封装(CMPAK), |
规格书PDF |