2SK1151S N沟道MOSFET 450V 1.5A TO-252/D-PAK marking/标记 K1151 低导通电阻/高速开关/低驱动电流/无二次击穿
| 最大源漏极电压Vds Drain-Source Voltage | 450V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 1.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.5Ω/Ohm @1A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2-3V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | Silicon N-Channel MOS FET High speed power switching Features Silicon N-Channel MOS FET Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter |
| 描述与应用 | 硅N沟道MOS FET 高速功率开关 特性 硅N沟道MOS FET 低导通电阻 高速开关 低驱动电流 无二次击穿 适用于开关稳压器和DC-DC转换 |
| 规格书PDF |
