2SK1470 N沟道MOSFET 60V 2A SOT-89 marking/标记 KD 高速开关/低导通电阻/低电压驱动
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 15V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.35Ω/Ohm @1A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 3.5W |
| Description & Applications | N-Channel MOS Silicon FET Very high-speed switching application Low ON resistance Very high-speed switching Low-voltage drive |
| 描述与应用 | N沟道MOS硅FET 非常高速开关应用 低导通电阻 非常高的速度开关 低电压驱动 |
| 规格书PDF |
