2SK1586 N沟道MOSFET 30V 1A SOT-89 marking/标记 NI FET作开关/低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.2Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3-2.5V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | N-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power source Not necessary to consider driving current because of its high input impedance Has high voltage and high-speed switching characteristics |
| 描述与应用 | N沟道MOS FET的切换 直接被带有5V电源的IC驱动 不必考虑驱动电流，因为它的高输入阻抗 具有高电压和高速开关特性 |
| 规格书PDF |
