2SK160A N沟道结型场效应管 50v 2~6mA SOT-23 marking/标记 K26 模拟开关
最大源漏极电压VdsDrain-Source Voltage | 50v |
栅源极击穿电压V(BR)GSGate-Source Voltage | -50v |
漏极电流(Vgs=0V)IDSSDrain Current | 2~6ma |
关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.25~-4.5v |
耗散功率PdPower Dissipation | 150mW/0.15W |
Description & Applications | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR The 2SK160 , 2SK160A are designed for hybrid IC which is designed for use in analog-switch Micro package |
描述与应用 | N-沟道硅结型场效应晶体管 2SK1602SK160A混合IC设计的,其目的是用于在模拟开关 微型封装 |
规格书PDF |