2SK2015 N沟道MOSFET 150V 3A TO-252/D-PAK marking/标记 K2015 无二次击穿
| 最大源漏极电压Vds Drain-Source Voltage | 150V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.7Ω/Ohm @2A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 750mW/0.75W |
| Description & Applications | Silicon N-channel Power F-mos Features Silicon N-Channel Power F-MOS High-speed switching No secondary breakdown For low-voltage drive Taping supply possible |
| 描述与应用 | 硅N沟道功率F-MOS 特性 硅N沟道功率F-MOS 高速开关 无二次击穿 对于低电压驱动 盘带供应可能 |
| 规格书PDF |
