2SK2201 N沟道MOSFET 100V 3A TO-252/D-PAK marking/标记 K2201 低漏源导通电阻/高正向转移导纳/低漏电流/增强型
| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.28Ω/Ohm @2A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.0V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2−π−MOSV Chopper Regulator, DC−DC Converter and Motor Drive Applications Features Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement−mode |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS型（L 2-π-MOSV 斩波稳压器，DC-DC转换器和电机驱动应用 特性 硅N沟道MOS型 斩波稳压器，DC-DC转换器和电机驱动应用 4 V栅极驱动 低漏源导通电阻 高正向转移导纳 低漏电流 增强型 |
| 规格书PDF |
