2SK2593JPL N沟道MOSFET SOT-523 marking/标记 2BP 低频放大/低噪声增益控制放大器/高增益/高栅漏电压VGDO
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | |
| Description & Applications | Silicon Junction FETs (Small Signal) Silicon N-Channel Junction FET For low-frequency amplification For switching Features Silicon N-Channel Junction FET For low-frequency amplification For switching Low noise, high gain High gate to drain voltage VGDO Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing |
| 描述与应用 | 硅结场效应晶体管（小信号） 硅N沟道结型场效应管 对于开关的低频放大 特性 硅N沟道结型场效应管 用于低频放大 用于开关 低噪声，高增益 高栅漏电压VGDO 迷你型包装，让瘦身套和通过自动插入磁带/盒包装 |
| 规格书PDF |
