2SK3107 N沟道MOSFET 30V 100mA/0.1A SOT-523/SC-75 marking/标记 D1 高速开关/低导通电阻/4V驱动
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 100mA/0.1A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3Ω/Ohm @10A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1-1.8V |
耗散功率Pd Power Dissipation | 200mW/0.2W |
Description & Applications | MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. Features N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Can be driven by a 2.5 V power source Low gate cut-off voltage |
描述与应用 | MOS场效应晶体管 N沟道MOS场效应晶体管 用于高速开关 说明 2SK3107是一种开关装置,可直接由一个驱动 2.5-V电源。 2SK3107具有优良的开关特性,适合用作一个高速数字电路中的开关器件。 特性 N沟道MOS场效应晶体管 用于开关 可以由一个2.5 V电源 低栅极截止电压 |
规格书PDF |