2SK3492 N沟道MOSFET 60V 8A TO-252/TP-FA marking/标记 K3492 超高速开关/低导通电阻/2.5V驱动器
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.115Ω/Ohm @4A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2-2.6V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | N-channel silicon MOSFET general -purpose switching device application Features General-purpose Switching device Applications Low ON-resistance Ultrahigh-speed switching 4Vdrive |
| 描述与应用 | N沟道硅MOSFET 通用开关设备中的应用 特性 通用开关设备应用 低导通电阻 超高速开关 4V驱动器 |
| 规格书PDF |
