2SK386209L(2SK38620TL) N沟道结型场效应管 20v 0.18~0.315mA SOT-523 marking/标记 5D 低频阻抗转换
| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.18~0.315ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | •Silicon N-channel junction FET •For impedance conversion in low frequency •For electret capacitor microphone Features Low noise voltage NV High voltage gain GV Thin package : TSSSMini3-F1 (1.2 mm × 1.2 mm × 0.33 mm) |
| 描述与应用 | •硅N沟道结型场效应管 •对于低频阻抗转换中 •对于驻极体电容式麦克风 特点 低噪声电压NV 高电压增益GV TSSSMini3 F1 薄的包装：（1.2毫米×1.2毫米×0.33毫米） |
| 规格书PDF |
