2SK620 N沟道MOSFET 50V 100mA/0.1A SOT-23/SC-59 marking/标记 3N 无二次击穿/4栅极驱动电压逻辑电平
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 50Ω/Ohm @20mA,5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.5-3.5V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon MOS FETs (Small Signal) Silicon N-Channel MOS FET For switching Features Silicon N-Channel MOS FET For switching High-speed switching Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing |
| 描述与应用 | 硅MOS场效应管（小信号） 硅N沟道MOS FET开关 特性 硅N沟道MOS FET 用于开关 高速开关 迷你型包装，让瘦身套和通过自动插入磁带/盒包装 |
| 规格书PDF |
