2SK711 N沟道结型场效应管 20v 10~20mA SOT-23 marking/标记 RBL AM高频放大器
最大源漏极电压VdsDrain-Source Voltage | 20v |
栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
漏极电流(Vgs=0V)IDSSDrain Current | 10~20ma |
关断电压Vgs(off)Gate-Source Cut-off Voltage | -2.5v |
耗散功率PdPower Dissipation | 150mW/0.15W |
Description & Applications | •Field Effect Transistor Silicon N Channel Junction Type •High Frequency Amplifier Applications •AM High Frequency Amplifier Applications •Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS (typ.) • Low Ciss: Ciss = 7.5 pF (typ.) |
描述与应用 | •场效应晶体管的硅N沟道结型 •高频放大器的应用 •AM高频放大器的应用 •声频放大器的应用 •高| YFS|:| YFS| =25毫秒(典型值) •低CISS:西塞=7.5 pF的(典型值) |
规格书PDF |