3LN03SS N沟道MOSFET 30V 350mA/0.35A sot-723 marking/标记 YG 低导通电阻/高速开关
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 350mA/0.35A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.7Ω/Ohm @180mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.3V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Silicon N-Channel MOS FET Low ON resistance Ultrahigh-speed switching 2.5V drive |
| 描述与应用 | 三洋半导体 N-沟道硅MOSFET 通用开关设备应用 特性 硅N沟道MOS FET 低导通电阻 超高速开关 2.5V驱动 |
| 规格书PDF |
