3SK239AXR N沟道MOSFET 12V 50mA SOT-143/MPAK-4 marking/标记 XR 低电压操作/低噪声增益控制放大器
| 最大源漏极电压VdsDrain-Source Voltage | 12V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | 6V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 50mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | |
| 耗散功率PdPower Dissipation | -1.2--1.6 |
| Description & Applications | 100mW/0.1W |
| 描述与应用 | GaAs Dual Gate MES FET UHF RF amplifier ·Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz) · Capable of low voltage operation. |
| 规格书PDF |
