AO3414 N沟道MOSFET 20V 4.2A SOT-23/SC-59 marking/标记 AE 低栅极电荷/
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 4.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.05Ω/Ohm @4.2A,2.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1V |
| 耗散功率Pd Power Dissipation | 1.4W |
| Description & Applications | General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON)low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 specifications). AO3400L is a Green Product ordering option. AO3400 and AO3400L are electrically identical. |
| 描述与应用 | AO3400采用先进的沟槽技术 提供优良的RDS（ON） 低栅极电荷和 操作与栅极电压低至2.5V。这 装置是适合用于作为负载开关或PWM 的应用程序。标准产品AO3400是无铅 （符合ROHS＆索尼259规格）。 AO3400L 是一种绿色产品订购选项。 AO3400和 AO3400L是电相同 |
| 规格书PDF |
