AO7401 P沟道MOS场效应管 -30V -1.2A 0.0122ohm SOT-23 marking/标记 1B 负载开关 低电流转换 低电流DC/DC转换
最大源漏极电压VdsDrain-Source Voltage | -30V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | -1.2A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.0122Ω @-1.2A,-10V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.6--1.4V |
耗散功率PdPower Dissipation | 350mW/0.35W |
Description & Applications | Features VDS (V) = -20V ID = -4 A RDS(ON) < 43mΩ (VGS = -4.5V) RDS(ON) < 54mΩ (VGS = -2.5V) RDS(ON) < 73mΩ (VGS = -1.8V) ESD Rating: 3000V HBM |
描述与应用 | VDS(V)=-20V ID=-4 A RDS(ON) <43MΩ(VGS=-4.5V) RDS(ON) <54MΩ(VGS=-2.5V) RDS(ON) <73mΩ(VGS=-1.8V) ESD额定值:3000V HBM |
规格书PDF |