AP15N03H N沟道MOSFET 30V 15A TO-252/D-PAK marking/标记 1503H
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 15A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.08Ω/Ohm @8A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-3V |
| 耗散功率Pd Power Dissipation | 28W |
| Description & Applications | The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15N03J) is available for low-profile applications. |
| 描述与应用 | 该TO-252包装普遍首选的所有commercialindustrial表面贴装应用，适用于低电压 诸如DC/ DC转换器的应用程序。通孔版本AP15N03J）可用于低配置应用程序 |
| 规格书PDF |
