BC847bT NPN三极管 50V 100mA/0.1A 250MHz 200~450 200~600 mV SOT-23/SC-59 marking/标记 1F
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 45V |
集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
截止频率fTTranstion Frequency(fT) | 250MHz |
直流电流增益hFEDC Current Gain(hFE) | 200~450 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 200~600 mV |
耗散功率PcPower Dissipation | 250mW/0.25W |
Description & Applications | NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856, BC857, BC858 BC859, BC860 (PNP) |
描述与应用 | NPN硅晶体管自动对焦 AF输入级和驱动器应用 高电流增益 低集电极 - 发射极饱和电压,低管压降 低噪音30 Hz和15千赫之间 互补类型:BC856,BC857,BC858 BC859,BC860(PNP) |
规格书PDF |