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BF998R N沟道MOSFET 12V 30mA SOT-143 marking/标记 MOP 无二次击穿/高速开关/高输入阻抗

价格(不含运费):
起批量(PCS):
¥0.460
≤99
¥0.414
≤499
¥0.345
≤999
¥0.299
≤2999
¥0.276
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最大源漏极电压Vds Drain-Source Voltage12V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage2V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsSilicon N-channel dual-gate MOS-FETs VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply voltage,such as television tuners and professional communications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT143 or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated diodes between gates and source.
描述与应用硅N沟道双栅MOS场效应管 VHF和UHF的应用程序具有12伏电压的电源电压, 诸如电视调谐器和专业的通信设备。 特点 •短沟道晶体管输入电容比具有较高的正向传输导纳 •低噪声增益控制放大器高达1 GHz。 应用 •VHF和UHF应用具有12伏电压的电源电压,如电视调谐器和专业的通信设备。 说明 耗尽型场效应晶体管在一个塑料超小型SOT143封装SOT143R相互连接的源和衬底。晶体管保护,以防止过高的输入电压浪涌门和源之间的集成二极管。
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