BFR106 NPN三极管 20V 100mA/0.1A 5GHz 80 SOT-23/SC-59 marking/标记 R7W
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
截止频率fTTranstion Frequency(fT) | 5GHz |
直流电流增益hFEDC Current Gain(hFE) | 80 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | |
耗散功率PcPower Dissipation | 500mW/0.5W |
Description & Applications | NPN 5 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications. |
描述与应用 | 5 GHz的宽带晶体管NPN 说明 硅NPN平面外延晶体管在一个塑料SOT23信封。它的主要目的是为噪音低,一般的RF应用。 |
规格书PDF |