BFR30 N沟道结型场效应管 25v 4~10mA SOT-23 marking/标记 M1P 低级别的通用放大器
| 最大源漏极电压VdsDrain-Source Voltage | 25v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -25v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 4~10ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | |
| 耗散功率PdPower Dissipation | 250mW/0.25W |
| Description & Applications | •N-channel silicon field-effect transistors DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. APPLICATIONS Low level general purpose amplifiers in thick and thin-film circuits. |
| 描述与应用 | •N沟道硅场效应晶体管说明 平面外延N沟道对称结 SOT23封装在一个塑料的场效应晶体管。 应用 低级别的通用放大器厚 薄膜电路。 |
| 规格书PDF |
